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| BSM50GD60DN2E3226 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate * E3226: long terminals, limited current per terminal Type BSM50GD60DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V VCE 600V IC 50A Package ECONOPACK 2 Ordering Code C67070-A2515-A67 VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 TC = 25 C Pulsed collector current, tp = 1 ms ICpuls 100 TC = 25 C Power dissipation per IGBT Ptot 200 W + 150 -55 ... + 150 0.6 1.5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jan-10-1997 BSM50GD60DN2E3226 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 C VGE = 15 V, IC = 50 A, Tj = 125 C Zero gate voltage collector current ICES 1.5 mA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 10 2.8 0.3 0.2 - S nF - VCE = 20 V, IC = 50 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jan-10-1997 BSM50GD60DN2E3226 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 60 - ns VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Rise time tr 80 - VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Turn-off delay time td(off) 330 - VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Fall time tf 550 - VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Free-Wheel Diode Diode forward voltage VF 2 1.8 - V IF = 50 A, VGE = 0 V, Tj = 25 C IF = 50 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.2 - s IF = 50 A, VR = -300 V, VGE = 0 V diF/dt = -500 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 50 A, VR = -300 V, VGE = 0 V diF/dt = -500 A/s Tj = 25 C Tj = 125 C 2.8 5 - Semiconductor Group 3 Jan-10-1997 BSM50GD60DN2E3226 Power dissipation Ptot = (TC) parameter: Tj 150 C 220 W Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 A Ptot 180 160 140 IC 10 2 tp = 16.0s 100 s 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 160 10 1 1 ms 10 0 10 ms DC 10 -1 0 10 10 1 10 2 V 10 3 TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 50 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT K/W IC 40 35 30 25 20 ZthJC 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 0.02 single pulse 0.01 15 10 5 0 0 10 -3 -5 10 -4 -3 -2 20 40 60 80 100 120 C 160 10 10 10 10 -1 s 10 0 TC tp Semiconductor Group 4 Jan-10-1997 BSM50GD60DN2E3226 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 100 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 100 A 17V 15V 13V 11V 9V 7V IC 80 70 60 50 40 30 20 10 0 0 IC 80 70 60 50 40 30 20 10 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jan-10-1997 BSM50GD60DN2E3226 Typ. gate charge VGE = (QGate) parameter: IC puls = 50 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 Ciss C 100 V 300 V 10 0 Coss Crss 10 -1 6 4 2 0 0 10 -2 0 20 40 60 80 100 120 160 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 100 200 300 400 500 600 V 800 VCE 0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 6 Jan-10-1997 BSM50GD60DN2E3226 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 22 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 50 A 10 3 tdoff tf tf t tdoff tr tdon 10 2 tdon ns t ns tr 10 2 10 1 0 20 40 60 80 100 A IC 140 10 1 0 20 40 60 80 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 22 10 Eoff mWs E 8 7 6 5 4 3 2 1 0 0 Eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 50 A 10 mWs E 8 7 6 Eoff 5 4 3 2 1 0 0 Eon 20 40 60 80 100 A IC 140 20 40 60 80 120 RG Semiconductor Group 7 Jan-10-1997 BSM50GD60DN2E3226 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 100 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 80 70 60 50 40 ZthJC 10 0 10 -1 D = 0.50 0.20 Tj=125C 30 20 10 0 0.0 Tj=25C 10 -2 single pulse 0.10 0.05 0.02 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Jan-10-1997 BSM50GD60DN2E3226 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group 9 Jan-10-1997 |
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